SMV2025-099 Wafer

Hyperabrupt Tuning Varactors Supplied on Film Frame and Waffle Packs


The SMV2025 series are silicon surface mount, hyperabrupt tuning varactor diodes, excellent for use as high-Q tuning elements in an RF Voltage Controlled Oscillator (VCO), voltagecontrolled phase shifter, or tunable bandpass filter.

The minimum capacitance ratio from 2 V to 10 V is 2.2, which makes the SMV2025 series suitable for wide-bandwidth VCOs and wide phase-range phase shifters.

The SMV2025-099 is supplied as 100-percent electrically tested, fully singulated wafers mounted on a film frame. The SMV2025-000 is supplied as a 100-percent electrically tested die in waffle packs.

Specifications

Die Size (mils)10.5±2
Vr Reverse Breakdown Voltage Ir = 10 µA (V) Min.20
Cj Junction Capacitance1 Vr=1 V (pF) Typ.5.88
Cj Junction Capacitance1 Vr=4 V (pF) Typ.3.44
Cj Junction Capacitance1 Vr=8 V (pF) Typ.2.24
Cj Junction Capacitance1 Vr=12 V (pF) Typ.1.5
Cj Junction Capacitance1 Vr=20 V (pF) Typ.1.15
Rs Series Resistance1 (Ω) Typ.0.5
Q Vr=4 V @ 50 MHz Min.

Features

  • Low series resistance and leakage current for low phase-noise VCOs
  • High-capacitance ratio: CT (2 V)/CT (10 V) = 2.2 minimum
  • Broad 18 V tuning range
  • Competitive cross to Toshiba 1SV280 varactor diode in die form
  • Available as:
    • Full wafer on film frame (SMV2025-099)
    • Dice in waffle packs (SMV2025-000)
  • Small footprint chip size: 10.5 x 10.5 x 5.5 mils

Product Documents