The SKY77772-11 Power Amplifier Module (PAM) is a fully matched 10-pad surface mount module developed for Long Term Evolution (LTE) applications. This small and efficient module packs full 699 MHz–748 MHz bandwidth coverage into a single compact package. Because of high efficiencies attained throughout the entire power range, the SKY77772-11 delivers unsurpassed talk-time advantages. The SKY77772-11 meets the stringent spectral linearity requirements of Long Term Evolution (LTE) data transmission with high power-added efficiency.

The Gallium Arsenide (GaAs) Microwave Monolithic Integrated Circuit (MMIC) contains all amplifier active circuitry, including input and interstage matching circuits. The silicon CMOS support die, providing precision biasing for the MMIC affords, a true MIPI RFFE control interface. Output match into a 50-ohm load is realized off-chip within the module package to optimize efficiency and power performance.

The SKY77772-11 is manufactured with Skyworks’ InGaP GaAs Heterojunction Bipolar Transistor (HBT) process which provides for all positive voltage DC supply operation and maintains high efficiency and good linearity. While primary bias to the SKY77772-11 can be supplied directly from any suitable battery with an output of 3.0 V to 4.5 V, optimal performance is obtained with VCC1 and VCC2 sourced from a DC-DC power supply adjusted within 0.5 V to 3.4 V based on target output power levels. No external supply side switch is needed as typical “off” leakage is a few microamperes with full primary voltage supplied from the battery.