AWB7231
2.01 - 2.025 GHz Small-Cell Power Amplifier Module

The AWB7231 is a fully matched, Multi-Chip-Module (MCM) designed for picocell, femtocell, and customer premises equipment (CPE) applications. Its high linearity and efficiency meet the extremely demanding needs of small cell infrastructure architectures. Designed for LTE,WCDMA and HSDPA air interfaces operating in the 2.01 to 2.025 GHz band, the AWB7231 delivers up to +27 dBm of LTE (E-TM1.1) power with an ACPR of -47 dBc. It operates from a convenient +4.5 V supply and provides 29 dB of gain. The device is manufactured using an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. The self-contained 7 mm x 7 mm x 1.3 mm surface mount package incorporates RF matching networks optimized for output power, efficiency, and linearity in a 50 Ω system.

Features

  • InGaP HBT Technology
  • -47 dBc ACPR @ ±10 MHz, +27 dBm
  • 29 dB Gain
  • High Efficiency
  • Low Transistor Junction Temperature
  • Matched for a 50 Ω System
  • Low Profile Miniature Surface Mount Package; RoHS Compliant
  • Multi-Carrier Capability
Data Sheets AWB7231: 2.01 - 2.025 GHz Small-Cell Power Amplifier Module AWB7231_204318A.pdf (505 KB)
Application Notes Switch Time Reduction: AWB71XX and AWB72XX series PAM’s AWB7XXX_204365A_AN.pdf (549 KB)
ProductName : AWB7231
Frequency Range (GHz) :
Test Frequency (GHz) :
Description : 2.01 - 2.025 GHz Small-Cell Power Amplifier Module
Output Power (dBm) : 27
Gain Typ. (dB) : 29
OIP3 (dBm) :
P1 dB (dBm) :
Power Added Efficiency (%) : 14
Linear Output Power (dBm) :
Supply Voltage (V) : 4.5
VCC (V) :
Quiescent Current Typ. (mA) :
Noise Figure Typ. (dB) :
Package (mm) : 7 x 7 x 1.3
Product Information:
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