DMF2183 Series
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DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes—Singles, Pairs and Quads Bondable and Packaged Chips
Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of the low capacitance junctions.
Beam-lead Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance with a narrow spread of capacitance values for close impedance control.
A variety of forward voltages are available, ranging from low values for low, or starved, local oscillator drive levels to high values for high drive, low distortion mixer applications. Beam-lead diodes are available in a wide range of packages. Capacitance ranges and series resistances are comparable with the packaged devices that are available through K-band. Unpackaged diodes are well suited for use in microwave integrated circuits. The packaged devices are designed to be inserted as hybrid elements in strip, transmission line applications. Beam-lead Schottky barrier diodes are categorized by universal mixer applications in four frequency ranges: S, X, Ku and Ka bands. They may also be used as modulators and high-speed switches.
Beam-lead diodes are suited for balanced mixers, due to their low parasitics and uniformity. A typical VF vs. IF curve is shown in Figure 1. Typical noise figures vs. LO drive is shown in Figure 2 for single N-type, low drive diode types.
Features
- Low 1/f noise
- Low intermodulation distortion
- Epoxy and hermetically sealed packages
- SPC controlled wafer fabrication
Data Sheets |
DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes V Singles, Pairs & Quads, Bondable & Packaged Chips |
DME_DMF_DMJ_Series_203261B.pdf (1189 KB) |
Application Notes
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Quality/Reliability
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200149C.pdf (300 KB)
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Application Notes |
ESD Compliance Testing and Recommended Protection Circuits for GaAs Devices |
200818B.pdf (114 KB) |
Application Notes
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Mixer and Detector Diodes
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200826A.pdf (458 KB)
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Application Notes |
Handling Precautions for Schottky Barrier Mixer and Detector Diodes |
200840A.pdf (71 KB) |
Application Notes
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Diode Chips, Beam-Lead Diodes, Capacitors: Bonding Methods and Packaging
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Bond_Methods_and_Pkg_App_Note_200532B.pdf (358 KB)
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ProductName
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DMF2183 Series
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Frequency Band
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X
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CJ 0 V, 1 MHz (pF)
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0.15-0.30
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Max. RS IF = 5 mA (Ω)
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8
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Min. VB @ 10 µA (V)
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2
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VF @ 1 mA (mV)
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250-310
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Drive Level
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Low
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Product Information:
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