AS195-306LF Buy Now
pHEMT GaAs IC High Power SP5T Switch 0.1–2 GHz

The AS195-306LF is a reflective SP5T switch. It is an ideal switch for higher power applications. It can be used for GSM dual band handset applications where both low loss, low current and small size are critical parameters.


  • 5 Symmetric RF Paths
  • Positive Voltage Control
  • High IP3
  • Excellent Harmonic Performance
  • Handles GSM Power Levels
Data Sheets AS195-306, AS195-306LF: PHEMT GaAs IC High-Power SP5T Switch 0.1-2 GHz AS195_306LF_200187D.pdf (371 KB)
Application Notes GaAs FETs as Control Devices APN2015.pdf (423 KB)
Application Notes APN2018:Silicon Drivers for Commercial IC Products APN2018.pdf (414 KB)
Application Notes APN2019:Switch Power Characteristics APN2019.pdf (412 KB)
Application Notes Suggested PCB Land Pattern Designs for Leaded and Leadless Packages and Detailed Surface Mount Guidelines for Leadless Packages PCB_Layout_Patterns_Guidelines_200123M.pdf (1429 KB)
Designer Info IC Package List ICPkgList_12-02.pdf (49 KB)
Designer Info Power Conversion dBm to Watts Pwrconversion.pdf (401 KB)
Designer Info VSWR, Return Loss and Transmission Loss vs. Transmitted Power VSWRreturn.pdf (401 KB)
ProductName : AS195-306LF
Description (Absorptive/ Reflective) : SP5T (R)
Frequency (GHz) Min. : 0.1
Frequency (GHz) Max. : 2.0
Typ. IL (dB) : 0.5-1.0
Typ. Isol. (dB) : 35-23
Typ. IIP3 (dBm) : 55
Typ. IP1 dB (dBm) : 37
Package : QFN, 16L
Package (mm) : 4 x 4 x 0.9
Product Information:
Description: Broad Market
Frequency Max.: ≥1 GHz and <2.9 GHz
Function: SP5T
Function: SP5T ~ SP16T
Package Type: Leaded
Power Handling: ≥30 dBm and <40 dBm
Status: In Production
Status: Not Recommended for New Designs
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