CDE7618-000 Buy Now
Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads

Skyworks packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. p-type silicon is used to obtain superior 1/f noise characteristics.n-type silicon is also available.


  • Both P-type and N-type low barrier silicon available
  • Low 1/f noise
  • Bonded junctions for reliability
  • Planar passivated beam-lead and chip construction
  • See also zero bias silicon schottky barrier detector diodes
Data Sheets Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads Silicon_Schottky_Barrier_Diodes_200847K.pdf (587 KB)
Application Notes Waffle Pack Chip Carrier Handling/Opening Procedure 200146A.pdf (94 KB)
Application Notes Quality/Reliability 200149C.pdf (300 KB)
Application Notes ESD Compliance Testing and Recommended Protection Circuits for GaAs Devices 200818B.pdf (114 KB)
Application Notes Mixer and Detector Diodes 200826A.pdf (458 KB)
Application Notes Handling Precautions for Schottky Barrier Mixer and Detector Diodes 200840A.pdf (71 KB)
Application Notes Diode Chips, Beam-Lead Diodes, Capacitors: Bonding Methods and Packaging Bond_Methods_and_Pkg_App_Note_200532B.pdf (358 KB)
ProductName : CDE7618-000
Frequency Band : K
Barrier : Med.
Min. TSS (dBm) :
Frequency Band GHz :
Junction Type : N
ZIF (Ω) :
CJ (pF) : 0.10
Gamma :
Min. E0 (mV) :
VF @ 1 mA (mV) : 375-500
ZV (Ω) :
RT (Ω) : 20
VB (V) : 3
RV @ 0 Bias (Ω) :
Product Information:
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