CDE7618-000

Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads


Skyworks packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications through 40 GHz in Ka band. They are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. p-type silicon is used to obtain superior 1/f noise characteristics.n-type silicon is also available.

Specifications

Product LifecycleIn Production
Frequency BandK
Min. TSS (dBm)
BarrierMed.
Junction TypeN
ZIF (Ω)
Frequency Band GHz
CJ (pF)0.10
VF @ 1 mA (mV)375-500
ZV (Ω)
Min. E0 (mV)
Gamma
VB (V)3
RT (Ω) 20
RV @ 0 Bias (Ω)

Features

  • Both P-type and N-type low barrier silicon available
  • Low 1/f noise
  • Bonded junctions for reliability
  • Planar passivated beam-lead and chip construction
  • See also zero bias silicon schottky barrier detector diodes

Product Documents

Applications

Surveillance Systems

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Space

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Instrumentation

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