SMV2023 Ceramic Package Buy Now
Silicon Hyperabrupt Varactor Diode Ceramic Package

Skyworks silicon hyperabrupt junction varactor diode chips are processed using established ion-implantation technology resulting in low RS wide tuning ratio devices with high Q values. These planar chips have a small outline size (12 x 12 mils nominal) and are fully passivated resulting in low leakage current and high reliability. These varactor chips are intended for assembly in hybrid integrated circuit resonators used in VCOs and analog tuned filters.

Features

  • High Q for Low Loss Resonators
  • Low Leakage Current
  • High Tuning Ratio for Wideband VCOs
  • SPICE Model Parameters
  • Small Footprint Chip Design
Data Sheets SMV2019 to SMV2023 Series: Hermetic Ceramic Packaged Silicon Hyperabrupt Junction Varactors SMV2019_2023_Series_203252C.pdf (450 KB)
Application Notes Quality/Reliability 200149C.pdf (300 KB)
Application Notes ESD Compliance Testing and Recommended Protection Circuits for GaAs Devices 200818B.pdf (114 KB)
Application Notes Varactor Diodes 200824A.pdf (112 KB)
Application Notes Diode Chips, Beam-Lead Diodes, Capacitors: Bonding Methods and Packaging Bond_Methods_and_Pkg_App_Note_200532B.pdf (358 KB)
Application Notes Varactor SPICE Models for RF VCO Applications Varactor_SPICE_Model_AN_200315C.pdf (240 KB)
ProductName : SMV2023 Ceramic Package
Package Designations (mils) : -230, 210, 219, 240
Vr Reverse Breakdown Voltage Ir = 10 µA (V) Min. : 22
Cj Junction Capacitance1 Vr=1 V (pF) Typ. : 7.67
Cj Junction Capacitance1 Vr=4 V (pF) Typ. : 4.75
Cj Junction Capacitance1 Vr=8 V (pF) Typ. : 2.68
Cj Junction Capacitance1 Vr=12 V (pF) Typ. : 1.49
Cj Junction Capacitance1 Vr=20 V (pF) Typ. : 0.91
Q Vr=4 V @ 50 MHz Min. : 400
Rs Series Resistance 1000 MHz (Ω) Typ. : 1.4
Product Information:
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