0.03-0.3 GHz Low-Noise, Low-Current Amplifier

Please note: SKY67015-396LF is being discontinued and is not recommended for new designs. The suggested replacement are SKY67150-396LF, SKY67159-396LF

The SKY67015-396LF is GaAs, pHEMT Low-Noise Amplifier (LNA) with an active bias and on-die stability structures enabling simple external matching The advanced GaAs pHEMT enhancement mode process provides excellent return loss, lower noise, and higher linearity performance compared to SiGe LNAs.

The internal active bias circuitry provides stable performance over temperature, and process variation. The device offers the Designer the ability to externally adjust supply current between 5 - 20 mA. Noise Figure of 0.80 dB, 17.5 dB Gain and 25 dBm OIP3 are achievable at 0.25 GHz with 3.3V supply and 18 ma of bias current. The device can also be biased from 1.8 to 5V and will still achieve an OIP3 of 16 dBm, and 12 dBm OP1dB with only 5 mA of bias current from 3.3V supply. This LNA is ideal for use in battery powered wireless transceivers.

The SKY67015-396LF operates in the frequency range of 30 to 300 MHz and the associated evaluation board is optimized for operation at 250 MHz. Evaluation boards optimized for different voltages and frequency ranges are available upon request. For the 433 MHz ISM band we recommend the pin-compatible SKY67012-396LF, for 866 & 915 MHz ISM band operation we recommend the pin compatible SKY67013-396LF and for the 2450 MHz ISM band the SKY67014-396LF. All these LNA’s are manufactured in a compact, 2 x 2 mm, 8-pin Dual Flat (DFN) package and are categorized as Skyworks Green.


Product LifecycleLast Time Buy
Frequency Range (GHz)0.03-0.30
Replacement Part SKY67150-396LF, SKY67159-396LF
Test Frequency (GHz)0.25
Gain Typ. (dB)17.5
OIP3 (dBm)25.0
VDD (V)3.3
OP1 dB (dBm)12.5
Supply Current Typ. (mA)18
Noise Figure Typ. (dB)0.8
PackageDFN, 8-pin
Package (mm)2 x 2 x 0.75


  • Low NF: 0.8 dB @ 150 MHz
  • Gain: 18.5 dB @ 150 MHz
  • Flexible supply voltage from 1.8 to 5.0 V
  • Adjustable supply current for higher IIP3
  • Improved NF and linearity compared to SiGe LNAs
  • Incorporates on-die stability structures
  • Miniature DFN (8-pin, 2 x 2 mm) package (MSL1 @ 260 °C per JEDEC J-STD-020)

Product Documents