Hyperabrupt Junction Tuning Varactor

The SMV1275-079LF is a silicon hyperabrupt junction varactor diode specifically designed for battery operation. The specified high-capacitance ratio and low-series resistance make this varactor appropriate for low phase-noise Voltage-Controlled Oscillators (VCOs) used at frequencies in wireless systems up to and above 2.5 GHz.

Applications for the SMV1275-079LF include low-noise and wideband UHF and VHF VCOs for GSM, PCS, CDMA, and analog phones. Table 1 describes the packaging and marking of the SMV1275-079LF varactor.


    • Cross to Toshiba JDV2S01E
    • Low-series resistance
    • High-capacitance ratio
    • Ultrasmall SC-79 package (MSL1, 260 °C per JEDEC J-STD-020)

Images & Diagrams


    • Package Type
    • SC-79
    • Vr Reverse Breakdown Voltage Ir = 10 µA (V) Min.
    • 10
    • Ct Total Capacitance3 Vr=1 V (pF) Typ.
    • 4.74
    • Ct Total Capacitance3 Vr=4 V (pF) Typ.
    • 1.58
    • Ct Total Capacitance3 Vr=8 V (pF) Typ.
    • 1.05
    • Ct Total Capacitance3 Vr=12 V (pF) Typ.
    • 0.89
    • Ct Total Capacitance3 Vr=20 V (pF) Typ.
    • Total Capacitance Ratio Min.1
    • 1.8
    • Capacitance Ratio Range (V)
    • 1 to 4
    • Rs Series Resistance Max2 (Ω)
    • 0.7

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