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SMSA7621-060

Surface Mount, 0201 Low-Barrier Silicon Schottky Diode

The SMSA7621-060 is a silicon, low-barrier N-type Schottky diode with an ultra-miniature 0201 footprint. This diode may be used in detector circuits, sampling circuits, and mixer circuits.

The low series resistance of this low-barrier diode enables good performance as a low-level mixer at frequencies of 24 GHz and 77 GHz.

Please note: SMSA7621-060 is being discontinued and is not recommended for new designs. The suggested replacement are SMS7621-079LF or SMS7621-040LF.
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Features

    • AEC-Q101 qualified
    • Low barrier height
    • Suitable for DC thru 24 GHz and 77 GHz
    • Low parasitic impedance: CP < 0.05 pF, LS < 0.2 nH
    • Low profile, ultra-miniature 0201 SMT package rated MSL1, 260 °C per JEDEC J-STD-020

Images & Diagrams

Specifications

    • VB IR = 10 µA (V)
    • 2 Min.
    • Typ. IR VR = 1 V (nA)
    • Max. CT @ 0 V (pF)
    • 0.18
    • VF IF = 1 mA (mV)
    • 260-320
    • Typ. CT @ 0.15 V (pF)
    • VF IF = 0.1 mA (mV)
    • Max. VF @ Spec. IF (mV)
    • Series Resistance (Ω)
    • 12
    • Video Resistance @ 0 V (Ω)

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