Si823H1CD-IS3

Si823H1CD-IS3


Our Si823H1CD-IS3 isolated gate drivers offer very high transient immunity of 125 kV/µs, low propagation delays of 30 ns max for better timing margins, a symmetric drive strength of 4.0 A sink and source with a drive boost circuit allowing faster FET turn-on and stable operation over a wide operating temperature range of -40 to 125 °C. It offers critical safety features such as dead time programmability, driver side UVLO options and over-temperature protection and compact size benefits. Isolation ratings of 2.5 kVrms are available. Si823H1CD-IS3 isolators are offered in a High Side / Low Side configuration.

Specifications

Input TypeVIA, VIB
Temperature Range Min (°C)-40
10 kV Surgetrue
Package TypeWB SOIC14
OPNSi823H1CD-IS3
Peak Output Current (A)4.0
Overlap Protection and Dead Time Controltrue
UVLO Voltage (V)12
Driver Supply (V)5.5
Input Supply (V)5.5,3.0
Package Size (mm)7.5x10.3
Description5.0 kV High Side/Low Side Drivers
AEC-Q100true
Max Propagation Delay58
Isolation Rating (kVrms)5
Output ConfigurationHigh Side / Low Side
Temperature Range Max (°C)125

Product Documents

Quality and Packaging

Look up product's green / pb-free status and information on RoHS, REACH, Halogen Free, and PFIS.

Certificate of Performance

Evaluation Kits

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si823h-aawa-kit

Si823Hx Gate Driver Board

The Si823Hx Gate Driver Board (GDB) is ideal for driving power modules and discrete transistors. This two-channel isolated gate driver solution features a differential digital interface, optimized on-board isolated power supply, and user-configurable turn-on and turn-off gate resistors. Status indicator LEDs and test points make evaluation and prototyping easy.

MSRP $49.00