RFX2411N: 2.4 GHz TX/RX Booster with Diversity Switch for IoT, Bluetooth® Applications, and Zigbee Technology Applications

The RFX2411N is a fully integrated, single-chip, single-die RF front-end integrated circuit (RFeIC®) that incorporates all the RF functionality needed for wireless Zigbee technology applications/and smart energy applications. The RFX2411N architecture integrates TX/RX and diversity switching circuitry with PA, LNA, and the associated matching networks with harmonic reduction in a CMOS single-chip device. The device also includes a bypass mode to provide maximum flexibility for system implementations.

The RFX2411N is designed for the 2.4 GHz ISM band and supports various signal applications in the ISM band, enhanced data rates and low energy applications such as Bluetooth®, 802.15.4, Zigbee technology applications, ANT, and Thread.

The RFX2411N is the perfect solution for applications requiring extended range and bandwidth, such as home and industrial automation, smart energy/smart metering, and RF4CE. RFX2411N interfaces seamlessly with low-voltage CMOS control logic, requires minimal external components, and provides an integrated PA power detector circuit. The superior performance, high sensitivity, high efficiency, low noise, small form factor, low power consumption and low cost make the RFX2411N an ideal and application-friendly solution.


Product LifecycleIn Production
RF Frequency (MHz)2400-2500
Rx Insertion Loss (dB) Typ.
Rx Gain (dB) Typ.14
Tx Gain (dB)25
Rx NF (dB) Typ.2.5
Saturated Output Power (dBm) Typ.20
Supply Voltage (V)
Package (mm)3 x 3


  • Single-chip, single-die CMOS IC
  • Transmit/receive switch circuitry
  • Antenna diversity switch circuitry
  • TX power amplifier or bypass
  • RX low-noise amplifier or bypass
  • Linearity in compliance with standards for OQPSK, DQPSK, and 8DPSK modulations
  • Integrated power detector for TX power monitor and control
  • CMOS control logic
  • ESD protection circuitry on all pins
  • RF ports do not carry DC voltage
  • Internal RF decoupling on VDD bias pins
  • Very low DC power consumption
  • Operation up to 125° C ambient temperature
  • Full on-chip matching and decoupling circuitry
  • Minimal external components required
  • 50 Ω input/output matching
  • Market-proven CMOS technology
  • Small QFN (20-lead,3.0 x 3.0 x 0.55 mm) package with exposed ground pad

  • Skyworks' products are designed to be used in connection with qualified Bluetooth® products and applications; however, Skyworks' products are not themselves qualified Bluetooth® products or otherwise approved by Bluetooth SIG, Inc.

Product Documents


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