Si823H2AD-IS3

Si823H2AD-IS3

Our Si823H2AD-IS3 isolated gate drivers offer very high transient immunity of 125 kV/µs, low propagation delays of 30 ns max for better timing margins, a symmetric drive strength of 4.0 A sink and source with a drive boost circuit allowing faster FET turn-on and stable operation over a wide operating temperature range of -40 to 125 °C. It offers critical safety features such as dead time programmability, driver side UVLO options and over-temperature protection and compact size benefits. Isolation ratings of 2.5 kVrms are available. Si823H2AD-IS3 isolators are offered in a High Side / Low Side configuration.

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Specifications

Input Type VIA, VIB
Temperature Range Min (°C) -40
10 kV Surge true
Package Type WB SOIC14
Peak Output Current (A) 4.0
Overlap Protection and Dead Time Control true
Driver Supply (V) 5.5
UVLO Voltage (V) 6
Input Supply (V) 5.5,3.0
Package Size (mm) 7.5x10.3
Description 5.0 kV High Side/Low Side Drivers
AEC-Q100 true
Max Propagation Delay 58
Isolation Rating (kVrms) 5
Output Configuration High Side / Low Side
Temperature Range Max (°C) 125
Input Type VIA, VIB
Temperature Range Min (°C) -40
10 kV Surge true
Package Type WB SOIC14
Peak Output Current (A) 4.0
Overlap Protection and Dead Time Control true
Driver Supply (V) 5.5
UVLO Voltage (V) 6
Input Supply (V) 5.5,3.0
Package Size (mm) 7.5x10.3
Description 5.0 kV High Side/Low Side Drivers
AEC-Q100 true
Max Propagation Delay 58
Isolation Rating (kVrms) 5
Output Configuration High Side / Low Side
Temperature Range Max (°C) 125

PRODUCT DOCUMENTS

QUALITY AND PACKAGING

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