SKY77705

Power Amplifier Module for WCDMA / HSDPA / HSUPA / HSPA+ / LTE – Band VIII (880–915 MHz)

Please note: SKY77705-14 is being discontinued and is not recommended for new designs.

The SKY77705 Power Amplifier Module (PAM) is a fully matched 10-pad surface mount module developed for Wideband Code Division Multiple Access (WCDMA) applications. This small and efficient module packs full 880–915 MHz bandwidth coverage into a single compact package. Because of high efficiencies attained throughout the entire power range, the SKY77705 delivers unsurpassed talk-time advantages. The SKY77705 meets the stringent spectral linearity requirements of High Speed Downlink Packet Access (HSDPA), High Speed Uplink Packet Access (HSUPA), and Long Term Evolution (LTE) data transmission with high power added efficiency. A directional coupler is integrated into the module thus eliminating the need for any external coupler.

The single Gallium Arsenide (GaAs) Microwave Monolithic Integrated Circuit (MMIC) contains all active circuitry in the module. The MMIC contains on-board bias circuitry, as well as input and interstage matching circuits. Output match into a 50-ohm load is realized off-chip within the module package to optimize efficiency and power performance.

The SKY77705 PAM is manufactured with Skyworks’ InGaP GaAs Heterojunction Bipolar Transistor (HBT) BiFET process that provides for all positive voltage DC supply operation while maintaining high efficiency and good linearity. Primary bias to the SKY77705 is supplied directly from any three-cell Ni-Cd, a single-cell Li-Ion, or other suitable battery with an output in the 3.2 to 4.2 volt range. No VREF voltage is required. Power down is accomplished by setting the voltage on VENABLE to zero volts. No external supply side switch is needed as typical “off” leakage is a few microamperes with full primary voltage supplied from the battery.

Product Summary

Talk to Sales ECAD Model

Specifications

Frequency (MHz)880-915

DescriptionPAM for WCDMA / HSDPA / HSUPA / HSPA+ / LTE

Typical PAE (%)39

Typical Gain (dB)27

Supply Voltage (V)3.2-4.2

PackageMCM, 10-pad

Package (mm)3 x 3 x 0.9

Features

Low voltage positive bias supply 3.2 V to 4.2 V
Good linearity
High efficiency
- 40% @ 28.5 dBm
Large dynamic range
Small, low profile package
- 3 x 3 x 0.9 mm
- 10-pad configuration
Power down control
InGaP
Supports low collector voltage operation
Digital Enable
No VREF required
CMOS compatible control signals
Integrated Directional Coupler

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