AWB7032
2.30 to 2.40 GHz Small-Cell Power Amplifier Module

The AWB7032 is a highly linear, fully matched, power amplifier module designed for picocell, femtocell, and customer premises equipment (CPE) applications. Its high power, efficiency, and low adjacent channel power levels meet the extremely demanding needs of small cell infrastructure architectures. Designed for LTE, WCDMA, HSDPA air interfaces operating in the 2.30 GHz to 2.40 GHz band, the AWB7032 delivers up to +24.5 dBm of LTE (E-TM1.1) power with an ACPR of -47 dBc. It operates from a convenient +4.2 V supply and provides 29 dB of gain. The device is manufactured using an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. The self-contained 5 mm x 5 mm x 1 mm surface mount package incorporates RF matching networks optimized for output power, efficiency, and linearity in a 50 Ω system.

Please note: AWB7032P8 is being discontinued and is not recommended for new designs.

Features

  • InGaP HBT Technology
  • -47 dBc ACPR @ + 10 MHz, +24.5 dBm
  • 29 dB Gain
  • High Efficiency
  • Low Transistor Junction Temperature
  • Internally matched for a 50 Ω System
  • Low Profile Miniature Surface Mount Package; Halogen Free and RoHS Compliant
  • Multi-Carrier Capability
Data Sheets AWB7032: 2.30 to 2.40 GHz Small-Cell Power Amplifier Module AWB7032_204319A.pdf (725 KB)
Application Notes Thermal Design Considerations and Mounting Guidelines for AWB Series Products Thermal_Design_Considerations_for_AWB_Products_204919B_AN.pdf (201 KB)
ProductName : AWB7032
Frequency Range (GHz) : 2.3-2.4
Test Frequency (GHz) :
Gain Typ. (dB) : 29
OIP3 (dBm) :
P1 dB (dBm) :
Power Added Efficiency (%) : 17.5
Linear Output Power (dBm) : 24.5
Supply Voltage (V) : 4.2
Quiescent Current Typ. (mA) :
Package :
Package (mm) : 5 x 5 x 1
Product Information:
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