4N47 / 4N48 / 4N49

Phototransistor Hermetic Optocouplers

The 4N47/48/49 is designed especially for hirel applications requiring optical isolation with high current transfer ratio and low saturation Vce. Each optocoupler consists of a light emmiting diode and a NPN silicon phototransistor mounted and coupled in a miniature custom ceramic substrate inside a hermeticTO-5 package. The low input current makes the 4N4X well suited for direct CMOS to LSTTL/TTL interfaces. All electrical parameters are identical to the JEDEC registered 4N47, 4N48, 4N49.

100% hi-rel screenings are available.

Data Sheets

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Specifications

Memo

ConditionTBD

CTR Min.TBD

CTR Max.TBD

BV_CEO (V)TBD

Vcc Max. (V)TBD

Switching Time (μs)TBD

Isolation @ V_DC 1 Sec.TBD

Package Photo

Package Info6-Lead Hermetic TO-5

Radiation Tolerant

No Base Connection

Features

Current transfer ratio guaranteed over –55 °C to +100 °C ambient temp. range
1000 V electrical isolation
Standard TO-5 hermetic package
High current transfer ratio at low input current
Base lead available for transistor biasing
100% hi-rel screenings are offered

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