Si828x Isolated Gate Drivers
Si828x isolated gate drivers are ideal for driving Silicon Carbide (SiC) FETs, IGBTs, and silicon MOSFETs in a wide variety of inverter and electric vehicle systems. Si828x devices are isolated, high current gate drivers with integrated system safety and feedback functions. Based on our proprietary silicon isolation technology, the drivers support up to 5.0 kV RMS and withstand voltage per UL1577, enabling higher-performance, reduced variation with temperature and age, tighter part-to-part matching, and superior common-mode rejection compared to other isolated gate driver technologies.
The input side includes a complementary PWM input with multiple configurations, as well as digital control and feedback signals. The controller to the device receives information about the driver side power state and fault state and recovers the device from fault through an active-low reset pin. On the output side, Si828x provides separate pull-up and pull-down pins for the gate, and a dedicated DSAT pin quickly detects a switch desaturation condition and immediately shuts down the driver in a controlled manner. Positive and negative gate voltages so necessary to robust SiC FET and IGBT operation are readily generated using an included source reference pin. To facilitate a strong turn-off of the power switch, a Miller clamp is integrated. Robust controls are available through simple bill-of-materials changes to adjust desaturation response time, desaturation threshold voltage, soft shutdown duration, drive boost current, and external Miller clamp capability.
Orderable Si828x options make many additional useful features available. The Si8281/82/83/84 adds an integrated, isolated dc-dc controller, providing a simple method for the isolated power rail necessary for the isolated driver and significantly simplifing layout. Si8286 devices are packaged in a configuration common to many optocoupler-based IGBT drivers.
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