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Isolation - Wolfspeed Partner Designs

Skyworks isolators are an ideal solution to drive Silicon Carbide MOSFETs and Modules from Wolfspeed. Browse multiple tested and optimized solutions to evaluate, prototype, and deploy Wolfspeed devices safely and efficiently.

Si828x Gate Driver Boards for Wolfspeed XM3 Modules

Skyworks Si828x-based Gate Driver Board is well-suited for driving Wolfspeed’s Silicon Carbide (SiC) Field Effect Transistor (FET)-based XM3 module, a high voltage/high current module suitable for traction inverters, industrial drive motors, EV fast chargers, uninterruptable power supplies, and more. Developed with support from Wolfspeed's XM3 module team, a test report is available that details the operations of Skyworks' Si828x isolated gate drivers and Wolfspeed's half-bridge SiC FET XM3 module. It describes the Si828x's robust short-circuit protection feature with the rugged SiC XM3 module, enabling the system to survive and operate well under extreme short-circuit conditions. The test report also includes the Si828x-XM3's performance in switching loss, crosstalk, and common-mode immunity (CMTI) tests in a half-bridge configuration.

Specs Si828x-AAWB-KIT Si828x-BAWB-KIT
Gate Drivers Si8284, Si8285 Si8284, Si8285
Configuration Half Bridge Half Bridge
Peak Output Current +20 A/-30 A +20 A/-30 A
Isolated Power Supplies +15V, -3.5V +15V, -3.5V
Common Mode Transient Immunity 125 kV/µs 125 kV/µs
Isolation Voltage 5 kV 5 kV
FET protection Desaturation detect, Miller Clamp Desaturation detect, Miller Clamp
Compatibility 1200V XM3 1700V XM3

Si828x SiC FET Half Bridge Reference Design

The Si828x Half Bridge Reference Design is a design package engineers can utilize to implement a half-bridge circuit to invert a DC Link voltage to a pseudo-sinusoidal AC voltage. A half-bridge is an element of a larger system such as a single- or multi-phase inverter used in industrial motor drives, electric vehicle traction drives, solar inverters, and more. This reference design contains schematics, layout, bill of materials, and a user guide. While the board and kit are not available for purchase, the technical material will provide a design example using the Si828x family of isolated gate drivers with protection and dc-dc option. Further, this reference design has been extensively tested by SiC FET partner Wolfspeed, and a report is available with the lab test results.



Si823Hx Gate Driver Boards

Our Si823Hx Gate Driver Boards (GDB) are ideal for driving a wide range of Wolfspeed Silicon Carbide (SiC) devices ranging from discrete FETs all the way to power modules like the Wolfspeed WolfPACK™. These two-channel isolated gate driver solutions feature a differential digital interface, optimized on-board isolated power supply, and user-configurable turn-on and turn-off gate resistors. Status indicator LEDs and test points make evaluation and prototyping easy. These GDB are compatible with Wolfspeed’s Clamped Inductive Load (CIL) test fixtures for controlled and comprehensive module evaluation, as well as the SpeedVal Kit™ Modular Evaluation Platform for discrete FETs.

Find the Right WolfPACK Gate Driver Board

Skyworks Wolfspeed Gate Driver Boards (GDB)
Gate Driver Si823H2CD-IS3 Si823H2CD-IS3 Si823H2CD-IS3
Interface Differential Differential Differential
Peak Output Current 4 A 4 A 4 A
Gate Resistance 1 Ω 4 Ω 0 Ω
Isolated Power Supplies +15 V, -3.5 V +15 V, -3.5 V +15 V, -3.5 V
Common Mode Transient Immunity 125 kV/µs 125 kV/µs 125 kV/µs
Isolation Voltage 5 kV 5 kV 5 kV

Onboard Charger Reference Design

6.6 kW High Power Density Bi-Directional EV On-Board Charger Featuring Si8233BB

The CRD-06600FF065N reference design demonstrates the application of Wolfspeed’s 650 V C3M™ SiC MOSFETs and our Si8234BB dual isolated gate driver to create a high power density electric vehicle (EV) on-board charger (OBC). The design leverages the high frequency switching capabilities of Wolfspeed 650 V C3M™ SiC MOSFETs to create a small, light and cost-effective system. This reference design is offered as a comprehensive design package which can be used as a starting point for new SiC designs.


The design accomplishes

  • Peak efficiencies of 96.5%
  • Power densities of 53 W/in^3 or 3 KW/L



  • Universal single-phase input voltage between 90 V and 265 V
  • Output voltage of 250 V-450 V DC
  • 18 A output current in charging mode
  • Front end AC/DC PFC using CCM totem-pole bi-directional topology operating at 67 KHz
  • Bi-directional DC/DC CLLC resonant converter operating at 148-300 KHz
  • Constant current, constant voltage, or constant power mode
  • Unique integrated heatsink design removes heat from MOSFET’s, transformer, and inductors
  • Si8234 highside/lowside dual isolated gate driver

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