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Features
- Single, positive voltage control: 0 to 3 and 0 to 5 V
- High isolation 64 dB at 1 GHz and 2 GHz
- Integrated silicon CMOS driver
- Absorptive
- Small, QFN (16-pin, 4 x 4 mm) Pb-free package (MSL1, 260 °C per JEDEC J-STD-020)
Images & Diagrams
Specifications
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- Description (Absorptive/ Reflective)
- SPDT (A)
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- Frequency (GHz) Min.
- 0.1
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- Frequency (GHz) Max.
- 6
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- Typ. IL (dB)
- 0.8-1.7
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- Typ. Isol. (dB)
- 42-65
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- Typ. IIP3 (dBm)
- 45
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- Typ. IP1 dB (dBm)
- 26
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- Control Logic
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- Package
- QFN, 16L
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- Package (mm)
- 4 x 4 x 0.9
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