Si823Hx automotive devices are robust gate drivers for silicon-, GaN- or SiC-based electric vehicle systems. Features include a robust 30 V driver VDD capability, low latency for tighter loop control, noise filtering; high CMTI of 125 kV/µs, -5 V voltage withstand on output pins and over-temperature protection. A driver boost stage provides an increased current drive capability during the Miller plateau region for faster turn-on times. Based on our proprietary CMOS capacitive isolation technology, Si823Hx isolated gate drivers deliver superior performance with robust isolation rating to enable driving state-of-the-art GaN or SiC FETs for maximizing system efficiency, while ensuring safety with features such as UVLO protection and dead-time programmability.