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AWB7132

2.30 to 2.40 GHz Small-Cell Power Amplifier Module

The AWB7132 is a highly linear, fully matched, power amplifier module designed for picocell, femtocell, and customer premises equipment (CPE) applications. Its high-power efficiency and low adjacent channel power levels meet the extremely demanding needs of small cell infrastructure architectures. Designed for LTE, WCDMA, HSDPA air interfaces operating in the 2.30 GHz to 2.40 GHz band, the AWB7132 delivers up to +24.5 dBm of LTE (E-TM1.1) power with an ACPR of –47 dBc. It operates from a convenient +4.2 V supply and provides 28 dB of gain. The device is manufactured using an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. The self-contained 7 mm x 7 mm x 1.3 mm surface-mount package incorporates RF matching networks optimized for output power, efficiency, and linearity in a 50 Ω system.

Please note: AWB7132 is being discontinued and is not recommended for new designs.

Features

    • InGaP HBT technology
    • –47 dBc ACPR @ + 10 MHz, +24.5 dBm
    • 28 dB gain
    • High efficiency
    • Low transistor junction temperature
    • Internally matched for a 50 Ω system
    • Low-profile miniature surface-mount package; Halogen free and RoHS compliant
    • Multi-carrier capability
    • Surface-mount (14-pin, 7 x 7 x 1.3 mm) package
    • (MSL rating TBD, 260 °C per JEDEC J-STD-020)

Images & Diagrams

Specifications

    • Frequency Range (GHz)
    • 2.3-2.4
    • Test Frequency (GHz)
    • Gain Typ. (dB)
    • 28
    • OIP3 (dBm)
    • P1 dB (dBm)
    • Power Added Efficiency (%)
    • 16
    • Linear Output Power (dBm)
    • 24.5
    • Supply Voltage (V)
    • 4.2
    • Quiescent Current Typ. (mA)
    • Package
    • Package (mm)
    • 7 x 7 x 1.3

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