Si8285EC-IS

Si8285EC-IS

Si8285EC-IS are isolated, high current gate drivers with integrated system safety and feedback functions, ideal for driving IGBTs used in a wide variety of inverter and motor control applications. Si8285EC-IS  devices support up to to 3.75 kVRMS withstand voltage per 15, provide feedback to the controller about the driver side power state and fault state and recover the device from fault through an active-low reset pin. On the output side, the Si8285EC-IS provides separate pull-up and pull-down pins for the gate. A dedicated DSAT pin detects the desaturation condition and immediately shuts down the driver in a controlled manner. A Miller clamp is also integrated in to facilitate a strong turn-off of the power switch. Orderable options in the Si8285EC-IS family include an integrated, isolated dc-dc controller. This provides a simple method for providing the isolated power rail necessary for the isolated driver and significantly simplifies layout. Si8286 devices are packaged in a configuration common to many optocoupler based IGBT drivers.

Data Sheets Eval Kit
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Si828x block diagram
Si828x block diagram

Specifications

Isolation Rating (kVrms)3.75
Package TypeWB SOIC16
Temperature Range Min (°C)-40
Temperature Range Max (°C)125
OPNSi8285EC-IS
Package Size (mm)7.5x10.3
DescriptionIsolated SiC and IGBT Driver
Input TypePWM
10 kV Surgefalse
Input Supply (V)5.5,2.8
AEC-Q100true
Max Propagation Delay50
Peak Output Current (A)4
Overlap Protection and Dead Time Controltrue
UVLO Voltage (V)15
Driver Supply (V)9.5
Output ConfigurationSingle Driver with FET Protection

Product Documents

Quality and Packaging

Look up product's green / pb-free status and information on RoHS, REACH, Halogen Free, and PFIS.

Certificate of Performance

Evaluation Kits

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Si8285_86v2-KIT

Si8285/86 Isolated Gate Driver Evaluation Kit

The Si8285_86 evaluation board allows system designers to evaluate the features and specifications of the Si8285 and Si8286 isolated SiC FET and IGBT drivers. Sockets are provided to allow the user to mount a SiC FET, IGBT, daughter card, or representative capacitor directly to the board. Power is applied through screw terminals, and signals can be applied or monitored through headers. Gate drive current boost daughter cards are also included for evaluation.

MSRP $199.00

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si828x-hb-evb

Si828x SiC FET Half Bridge Reference Design

The Si828x Half Bridge Reference Design is a design package engineers can utilize to implement a half-bridge circuit to invert a DC Link voltage to a pseudo-sinusoidal AC voltage.

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