Si823H6BB-AS1

Si823H6BB-AS1


The Si823H6BB-AS1 automotive isolated gate driver offers very high transient immunity of 125 kV/µs, low propagation delays of 30 ns max for better timing margins, a symmetric drive strength of 4.0 A sink and source with a drive boost circuit allowing faster FET turn-on and stable operation over automotive temperatures of -40 to 125 °C. It offers critical safety features such as driver side UVLO options and over-temperature protection and compact size benefits. Isolation ratings of 2.5 kVrms are available. Si823H6BB-AS1 isolators are offered in a Dual Driver configuration.

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Specifications

Input TypeVIA, VIB
Temperature Range Min (°C)-40
10 kV Surgetrue
Package TypeNB SOIC16
OPNSi823H6BB-AS1
Peak Output Current (A)4.0
Overlap Protection and Dead Time Controlfalse
UVLO Voltage (V)8
Driver Supply (V)5.5
Input Supply (V)5.5,3.0
Package Size (mm)3.9x9.9
DescriptionAutomotive 2.5 kV Dual Drivers
AEC-Q100true
Max Propagation Delay30
Isolation Rating (kVrms)2.5
Output ConfigurationDual Driver
Temperature Range Max (°C)125

Product Documents

Quality and Packaging

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