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DMJ2768 Series

DME, DMF, DMJ Series: Silicon Beam-Lead Schottky Mixer Diodes—Singles, Pairs and Quads Bondable and Packaged Chips

Skyworks beam-lead silicon Schottky barrier mixer diodes are designed for applications through 40 GHz. The beam-lead design reduces the problem of bonding to the very small area characteristic of the low capacitance junctions.

Beam-lead Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction. The process and choice of materials result in low series resistance with a narrow spread of capacitance values for close impedance control.

A variety of forward voltages are available, ranging from low values for low, or starved, local oscillator drive levels to high values for high drive, low distortion mixer applications. Beam-lead diodes are available in a wide range of packages. Capacitance ranges and series resistances are comparable with the packaged devices that are available through K-band. Unpackaged diodes are well suited for use in microwave integrated circuits. The packaged devices are designed to be inserted as hybrid elements in strip, transmission line applications. Beam-lead Schottky barrier diodes are categorized by universal mixer applications in four frequency ranges: S, X, Ku and Ka bands. They may also be used as modulators and high-speed switches.

Beam-lead diodes are suited for balanced mixers, due to their low parasitics and uniformity. A typical VF vs. IF curve is shown in Figure 1. Typical noise figures vs. LO drive is shown in Figure 2 for single N-type, low drive diode types.

Features

    • Low 1/f noise
    • Low intermodulation distortion
    • Epoxy and hermetically sealed packages
    • SPC controlled wafer fabrication

Images & Diagrams

Specifications

    • Frequency Band
    • Ku
    • CJ 0 V, 1 MHz (pF)
    • 0.05-0.15
    • Max. RS IF = 5 mA (Ω)
    • 13
    • Min. VB @ 10 µA (V)
    • 4
    • VF @ 1 mA (mV)
    • 500-680
    • Drive Level
    • High

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