Si823H1AB-IM1

Si823H1AB-IM1

Our Si823H1AB-IM1 isolated gate drivers offer very high transient immunity of 125 kV/µs, low propagation delays of 30 ns max for better timing margins, a symmetric drive strength of 4.0 A sink and source with a drive boost circuit allowing faster FET turn-on and stable operation over a wide operating temperature range of -40 to 125 °C. It offers critical safety features such as dead time programmability, driver side UVLO options and over-temperature protection and compact size benefits. Isolation ratings of 2.5 kVrms are available. Si823H1AB-IM1 isolators are offered in a High Side / Low Side configuration.

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Specifications

Input Type VIA, VIB
Temperature Range Min (°C) -40
10 kV Surge true
Package Type DFN14
Peak Output Current (A) 4.0
Overlap Protection and Dead Time Control true
Driver Supply (V) 5.5
UVLO Voltage (V) 6
Input Supply (V) 5.5,3.0
Package Size (mm) 5x5
Description 2.5 kV High Side/Low Side Drivers
AEC-Q100 true
Max Propagation Delay 58
Isolation Rating (kVrms) 2.5
Output Configuration High Side / Low Side
Temperature Range Max (°C) 125
Input Type VIA, VIB
Temperature Range Min (°C) -40
10 kV Surge true
Package Type DFN14
Peak Output Current (A) 4.0
Overlap Protection and Dead Time Control true
Driver Supply (V) 5.5
UVLO Voltage (V) 6
Input Supply (V) 5.5,3.0
Package Size (mm) 5x5
Description 2.5 kV High Side/Low Side Drivers
AEC-Q100 true
Max Propagation Delay 58
Isolation Rating (kVrms) 2.5
Output Configuration High Side / Low Side
Temperature Range Max (°C) 125

PRODUCT DOCUMENTS

QUALITY AND PACKAGING

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Certificate of Conformance
Product

si823h2-kit

Si823H2 Isolated Gate Driver Evaluation Kit

The Si823H2-KIT evaluation board allows you to evaluate our Si823Hx family of high performance drivers. The board is populated with the Si823H2x version of the family. The board includes test terminals for quick evaluation of the devices’ key parameters and to accommodate direct connection to the designer’s end system.

MSRP $49.00

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