Si823H7CD-IS3

Si823H7CD-IS3

Our Si823H7CD-IS3 isolated gate drivers offer very high transient immunity of 125 kV/µs, low propagation delays of 30 ns max for better timing margins, a symmetric drive strength of 4.0 A sink and source with a drive boost circuit allowing faster FET turn-on and stable operation over a wide operating temperature range of -40 to 125 °C. It offers critical safety features such as driver side UVLO options and over-temperature protection and compact size benefits. Isolation ratings of 2.5 kVrms are available. Si823H7CD-IS3 isolators are offered in a Dual Driver configuration.

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Specifications

Input Type VIA, VIB
Temperature Range Min (°C) -40
10 kV Surge true
Package Type WB SOIC14
Peak Output Current (A) 4.0
Overlap Protection and Dead Time Control false
UVLO Voltage (V) 12
Driver Supply (V) 5.5
Input Supply (V) 5.5,3.0
Package Size (mm) 7.5x10.3
Description 5.0 kV Dual Drivers
AEC-Q100 true
Max Propagation Delay 30
Isolation Rating (kVrms) 5
Output Configuration Dual Driver
Temperature Range Max (°C) 125
Input Type VIA, VIB
Temperature Range Min (°C) -40
10 kV Surge true
Package Type WB SOIC14
Peak Output Current (A) 4.0
Overlap Protection and Dead Time Control false
UVLO Voltage (V) 12
Driver Supply (V) 5.5
Input Supply (V) 5.5,3.0
Package Size (mm) 7.5x10.3
Description 5.0 kV Dual Drivers
AEC-Q100 true
Max Propagation Delay 30
Isolation Rating (kVrms) 5
Output Configuration Dual Driver
Temperature Range Max (°C) 125

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